True Wafer Surface Temperature and Reflectance Measurement for GaN-based Epitaxy, 650 to 1300°C

Advanced Energy(AE)的UV 400和UVR 400高温计可以直接测量晶片表面温度。这种改进的方法可以更精确地控制晶圆温度，从而提高成品率。

The UVR 400 includes an additional reflectometer at 635 nm with 0.5 kHz measurement speed. This enables you to enable measure deposition thickness.